|
| Other Technologies Available for
Licensing |
|
|
Antifuse Structures with Improved Manufacturability |
|
| U.S. Patent
5,831,325 |
|
| During the fabrication of this new antifuse structure, the
antifuse layer and bottom electrode are not exposed to any harmful
processing environment. The three major components of the antifuse - the
bottom electrode, the antifuse layer and the top buffer layer - are formed
consecutively without any photolithography or etching step in-between.
This antifuse structure can substantially improve the antifuse
yield. |
|
|
|
|
|
Multi-Level Storage Capacitor Structure with Improved Memory Density |
|
| U.S. Patent
5,712,813 |
|
| DRAM structure using multi-level stacked capacitor is disclosed.
The stacked capacitor could be either planar or three-dimensional (e.g.
cylindrical or fin-shaped). The storage capacitors of adjacent DRAM cells
are built at different levels and overlap each other. As a result, more
capacitor area can be obtained with a fixed cell area. CMP technique can
further facilitate implementation of this technology. |
|
|
|