|
Unlike the traditional IC, which is built on 2-D plane, 3D-ROM is built in 3-D space. It is based on mature technology and can be manufactured using standard equipments. 3D-ROM offers lower cost, higher capacity and better integratibility. It will enable "Computer-on-a-Chip" and other applications. MORE |
|
As silicon oxide thickness approaches its useful
limit, its replacement materials are being searched. ProMO can be made into thin films
with low defect densities. Pilling-Bedworth
ratio is a valuable figure of merit. MORE |
|
|
What's New |
|
|
|
Following 3-D memory patents have been issued recently: 6,906,361, 6,903,427, 6,861,715, 6,812,488, 6,717,222. |
|
|
|
3D-ROM technology was issued as
Chinese Patent ZL
98 1 19572.5 (~2MB, including partial translation) on Jan 22,
2003. |
|
|
|
ProMO technology was issued as
Chinese Patent ZL
98 1 19257.2 (~780kB) on July 17,
2002. |
|
|
|
3-D ROM technology is featured in the Cover Story - "Exotic Memories, Diverse Approaches" (by Brian Dipert) - of EDN Magazine April 26, 2001; EDN Japan August, 2001; EDN Asia September, 2001; EDN China October, 2001. |
|
|
|
"Candidates for Silicon Oxide Replacement" is featured on Semiconductor Online Nov. '00. |
|
|
|
"3D-ROM - A First Practical Step Towards 3D-IC" is featured on Semiconductor International July '00. |
|
|
|
"Improving IC Yield with Protective Ceramics" is featured on Semiconductor International June '00. |
